Effect of High Temperature Pre-Annealing on Thermal Donors in N-Doped CZ-Silicon

1 Department of Physics, Government P.G. College, Ramnagar, Nainital (Uttarakhand), INDIA. 2 Department of Physics, R.H. Govt. Post Graduate College, Kashipur, U S Nagar (Uttarakhand), INDIA. ______________________________________________________________________________________ Abstract: Role of high temperature pre-annealing at 1000 0 C for shorter duration of 10 h and longer duration of 40 h, followed by annealing at 650 0 C up to 90 h, has been studied in N-undoped /doped CZ-Silicon. Four Probe and FTIR Spectroscopy tools have been employed in this study. The increase in carrier concentration in Ndoped CZ-Silicon occurs at and above 20 h of annealing and the rate of increase is quantitatively more in sample without pre-annealing as compared to pre-annealed at 1000 0 C. It is also observed that neither the shorter nor the longer high temperature pre-annealing time has any effect on carrier concentration in N-doped CZ-Silicon.